Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anIn0.07Ga0.93N/In0.12Ga0.88Nmultiple quantum well

Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.

Ultrafast differential transmission spectroscopy is used to explore temperature-dependent carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Electron-hole pairs are optically injected into the three dimensional GaAs barriers, after which we monitor carrier relaxation into the two dimensional InGaAs quantum wells and the zero dimensional InAs quantum dots by tuning the pr...

Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires

Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination of non-degenerate transmission and reflection measurements reveal initial ultrafast state filling dynamics independent of the probing photon energy. This behavior is attribute...

Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy.

We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as th...

Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

Spatially, spectrally, and temporally resolved cathodoluminescence ~CL! techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells ~QWs!. Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition...